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1999 International Symposium on Power Semiconductor Devices and Ic"s

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Published by Ieee .
Written in English

Subjects:

  • Mathematics and Science,
  • Science/Mathematics

Book details:

The Physical Object
FormatPaperback
ID Numbers
Open LibraryOL10999421M
ISBN 100780352904
ISBN 109780780352902

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Power Semiconductor Devices and ICs, 10th International Symposium [International Symposium on Power Semiconductor Devices & ICs (10th: Kyoto, Japan), IEEE] on *FREE* shipping on qualifying offers. Power Semiconductor Devices and ICs, 10th International Symposium4/5(1). He has published over scientific papers in international journals and conference proceedings, 3 book chapters, and has filed more than patents. The focus of his current research is on ultra-compact and ultra-efficient SiC and GaN converter systems, wireless power transfer, solid-state transformers, power supplies on chip, and ultra-high. Proceedings of the International Symposium on Power Semiconductor Devices & ICs Browse related items Start at call number: TK I59 3RD TK . Hong Kong, China May IEEE Catalog Number: ISBN: CFP15ISP-POD IEEE 27th International Symposium on Power Semiconductor Devices & IC’sFile Size: 93KB.

Proceedings of the 5th International Symposium on Power Semiconductor Devices and Ics: Ispsd'93 May , Monterey, California, Usa/93Ch [Williams, Richard K., Baliga, B. Jayant] on *FREE* shipping on qualifying offers. Proceedings of the 5th International Symposium on Power Semiconductor Devices and Ics: Ispsd'93 May , MontereyAuthor: Richard K. Williams.   The 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) He was elected an academician of the Chinese Academy of Sciences in and a life fellow of the Institute of Electrical and Electronics Engineers (IEEE) in In , he won the Pioneer Award from IEEE's International Symposium on Power Semiconductor Devices and ICs (ISPSD), the first awardee from the Asia-Pacific mater: Tongji University.   A.W. Ludikhuize, M. Slotboom, A. Nezar, N. Nowlin, R. Brock, Analysis of hot-carrier-induced degradation and snapback in submicron 50 V lateral MOS transistors, in International Symposium on Power Semiconductor Devices & ICs (Weimar, Germany, ) Google ScholarAuthor: Tobias Erlbacher.

Power Semiconductor Devices and ICs, ISPSD ' Proceedings of the 2nd International Symposium on | Read articles with impact on ResearchGate, the professional network for scientists. International Symposium on Power Semiconductor Devices and ICs in , explore presented research, speakers and authors of ISPSD Kanazawa, Japan May IEEE Catalog Number: ISBN: CFP13ISP-POD 25th International Symposium on Power Semiconductor Devices & IC’s.   Author of Conference proceedings, DIPED, Intenational Electron Devices Meeting (Iedm) Proceedings, International Symposium on Power Semiconductor Devices and ICs (Ispsd) Proceedings, GaAs IC Symposium, ASMC , IEEE Conference on .